? AUIRF2907Z v dss 75v r ds(on) max. 4.5m ?? i d (silicon limited) 170a i d (package limited) 75a features ? advanced planar technology ? ultra low on-resistance ? 175c operating temperature ? fast switching ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * description specifically designed for au tomotive applications, this hexfet? power mosfet utilizes the latest processing techniques to achieve extremel y low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast sw itching speed and improved repetitive avalanche rating . thes e features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications 1 2017-09-21 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) 170 a i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) 120 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 75 i dm pulsed drain current ? 600 p d @t c = 25c maximum power dissipation 300 w linear derating factor 2.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy (thermally limited) ? 270 e as (tested) single pulse avalanche energy tested value ? 690 i ar avalanche current ? see fig.15,16, 12a, 12b a e ar repetitive avalanche energy ? mj t j operating junction and -55 to + 175 ? t stg storage temperature range c ? soldering temperature, for 10 seconds (1.6mm from case) 300 ? mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) ? mj absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units r ? jc junction-to-case ? ??? 0.50? c/w r ? cs case-to-sink, flat, greased surface ? 0.50 ??? r ? ja junction-to-ambient ? ??? 62 to-220ab AUIRF2907Z s d g base part number package type standard pack form quantity AUIRF2907Z to-220 tube 50 AUIRF2907Z orderable part number g d s gate drain source hexfet ? power mosfet
? AUIRF2907Z 2 2017-09-21 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? limited by t jmax , starting t j = 25c, l = 0.095mh, r g = 25 ? , i as = 75a, v gs =10v. part not recommended for use above this value. ? i sd 75a, di/dt 340a/s, v dd v (br)dss , t j 175c. ? pulse width ? 1.0ms; duty cycle ? 2%. ? coss eff. is a fixed capacitance that gives the same charging ti me as coss while v ds is rising from 0 to 80% v dss . ? limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. ?? this value determined from sample failure population, starting t j = 25c, l = 0.095mh, r g = 25 ? , i as = 75a, v gs =10v. ? r ? is measured at t j of approximately 90c. ?? to-220 device will have an rth of 0.45c/w. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 75 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.069 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 3.5 4.5 m ??? v gs = 10v, i d = 75a ?? v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a gfs forward trans conductance 180 ??? ??? s v ds = 10v, i d = 75a i dss drain-to-source leakage current ??? ??? 20 a v ds = 75v, v gs = 0v ??? ??? 250 v ds =75v,v gs = 0v,t j =125c i gss gate-to-source forward leakage ??? ??? 200 na v gs = 20v gate-to-source reverse leakage ??? ??? -200 v gs = -20v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 180 270 nc ? i d = 75a q gs gate-to-source charge ??? 46 ??? v ds = 60v q gd gate-to-drain charge ??? 65 v gs = 10v ? t d(on) turn-on delay time ??? 19 ??? ns v dd = 38v t r rise time ??? 140 ??? i d = 75a t d(off) turn-off delay time ??? 97 ??? r g = 2.5 ?? t f fall time ??? 100 ??? v gs = 10v ? l d internal drain inductance ??? 5.0 ??? nh ? between lead, 6mm (0.25in.) l s internal source inductance ??? 13 ??? from package and center of die contact c iss input capacitance ??? 7500 ??? pf ? v gs = 0v c oss output capacitance ??? 970 ??? v ds = 25v c rss reverse transfer capacitance ??? 510 ??? ? = 1.0mhz, see fig. 5 c oss output capacitance ??? 3640 ??? v gs = 0v, v ds = 1.0v ? = 1.0mhz c oss output capacitance ??? 650 ??? v gs = 0v, v ds = 60v ? = 1.0mhz c oss eff. effective output capacitance ??? 1020 ??? v gs = 0v, v ds = 0v to 60v diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 75 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 680 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c,i s = 75a ,v gs = 0v ?? t rr reverse recovery time ??? 41 61 ns t j = 25c ,i f = 75a ,v dd = 38v q rr reverse recovery charge ??? 59 89 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d )
? AUIRF2907Z 3 2017-09-21 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 typical forward transconductance vs. drain current fig. 1 typical output characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v ? 60s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v ? 60s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ? v ds = 10v 380s pulse width
? AUIRF2907Z 4 2017-09-21 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 50 100 150 200 q g total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 60v v ds = 38v v ds = 15v i d = 90a 0.00.51.01.52.02.5 v sd , source-to-drain voltage (v) 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 11 01 0 0 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100sec 1msec 10msec dc limited by package
? AUIRF2907Z 5 2017-09-21 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 120 140 160 180 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 90a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 t h e r m a l re s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 r 1 r 1 r 2 r 2 ? c ? c ci= ? i ? ri ci= ? i ? ri ri (c/w) ? i (sec) ? 0.279 0.000457 0.221 0.003019
? AUIRF2907Z 6 2017-09-21 ? fig 14. threshold voltage vs. temperature fig 12a. unclamped inductive test circuit fig 12b. unclamped inductive waveforms r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 13b. gate charge test circuit fig 13a. gate charge waveform 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 200 400 600 800 1000 1200 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 9.0a 13a bottom 75a fig 12c. maximum avalanche energy vs. drain current -75 -50 -25 0 25 50 75 100 125 150 175 200 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a
? AUIRF2907Z 7 2017-09-21 ? fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.infineon.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanc he is allowed as long as t jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 11) p d (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 16. maximum avalanche energy vs. temperature 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e cu r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 75a
? AUIRF2907Z 8 2017-09-21 ? fig 17. peak diode recovery dv/dt test circuit for n-channel hexfet? power mosfets fig 18a. switching time test circuit fig 18b. switching time waveforms
? AUIRF2907Z 9 2017-09-21 ? to-220ab package is not recommended for surface mount application. to-220ab part marking information ywwa xx ? xx date code y= year ww= work week AUIRF2907Z lot code part number ir logo to-220ab package outline (dimensions are shown in millimeters (inches))
? AUIRF2907Z 10 2017-09-21 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level to-220ab n/a esd machine model class m4 (+/- 425v) ? aec-q101-002 human body model ? class h2 (+/- 4000v) ? aec-q101-001 charged device model class c4 (+/- 1000v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 9/21/2017 ?? updated datasheet with corporate template. ?? corrected typo error on package outline and part marking on page 9. ? highest passing voltage.
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